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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX11 www..com DESCRIPTION *With TO-3 package *High current capability *Fast switching speed APPLICATIONS *For use in switching and linear applications PINNING(see fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 tp=10ms Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 20 25 4 150 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2mA; IB=0 IE=50mA; IC=0 IC=6 A;IB=0.6A IC=12 A;IB=1.5 A IC=12 A;IB=1.5 A VCE=250V;VBE=-1.5V TC=125 VCE=160V;IB=0 VEB=5V; IC=0 IC=6A ; VCE=2V IC=12A ; VCE=4V IC=1A ; VCE=15V; f=10MHz 20 10 8.0 MIN 200 7 TYP. www..com BUX11 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V V 0.6 1.5 1.5 1.5 6.0 1.5 1.0 60 V V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=12A ;IB1=1.5A VCC=150V IC=12A ;IB1=-IB2=1.5A VCC=150V 1.0 1.8 0.4 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BUX11 Fig.2 Outline dimensions 3 |
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